公开(公告)号：US11774370B2

公开(公告)日：2023-10-03

申请号：US17507797

申请日：2021-10-21

Applicant: AP SYSTEMS INC.

Inventor： Yong Soo Moon ,  Hahn Joo Yoon ,  Chan Ho Hong ,  Seung Hwan Lee ,  Oh Seung Kwon

IPC: G01N21/95 ,  G01N21/88 ,  G01K13/00

CPC classification number: G01N21/95 ,  G01N21/8806 ,  G01K13/00

Abstract: Provided are an apparatus for processing a substrate and a method for measuring a temperature of the substrate. The apparatus for processing the substrate includes a temperature measurement part and a light-transmitting shield plate. The temperature measurement part includes a light source, a light receiving part configured to receive reflected light reflected by the substrate or the shield plate among the light irradiated from the light source, and a radiant light emitted from the substrate to measure a quantity of the reflected light and an intensity of the radiant light and a temperature calculation part configured to calculate the temperature of the substrate, to which a contamination level of the shield plate is reflected, by using the quantity of the reflected light and the intensity of the radiant light.

公开(公告)号：US10985040B2

公开(公告)日：2021-04-20

申请号：US16132218

申请日：2018-09-14

Applicant: AP SYSTEMS INC.

Inventor： Sang Hyun Ji ,  Yong Soo Moon ,  Gun Bum Lee

IPC: G01J5/00 ,  G01K1/00 ,  G01K13/00 ,  H01L21/67 ,  G01J5/02 ,  G01J5/08

Abstract: A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (εt0) by applying a correction value for correcting the total emissivity (εt) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (εt0).