发明授权
- 专利标题： Structure and formation method of semiconductor device structure with nanowires
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申请号： US16528768申请日： 2019-08-01
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公开(公告)号： US10991811B2公开(公告)日： 2021-04-27
- 发明人: Chao-Ching Cheng , Wei-Sheng Yun , Shao-Ming Yu , Tsung-Lin Lee , Chih-Chieh Yeh
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/762 ; H01L29/06 ; H01L29/423 ; H01L29/775 ; H01L29/78 ; H01L29/786 ; B82Y10/00 ; H01L29/08 ; H01L27/06 ; H01L27/092 ; H01L21/822 ; H01L21/8234 ; H01L29/417 ; H01L29/40 ; H01L29/165
摘要：
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a plurality of nanowires over an input-output region, and a protective layer surrounding the nanowires. The protective layer is made of silicon, silicon germanium, silicon oxide, silicon nitride, silicon sulfide, or a combination thereof. The semiconductor device structure also includes a high-k dielectric layer surrounding the protective layer, and a gate electrode surrounding the high-k dielectric layer. The semiconductor device structure further includes a source/drain portion adjacent to the gate electrode, and an interlayer dielectric layer over the source/drain portion.
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