Method for manufacturing tunnel field effect transistor

    公开(公告)号:US10269934B2

    公开(公告)日:2019-04-23

    申请号:US15590243

    申请日:2017-05-09

    Abstract: A semiconductor device includes a substrate, at least one first semiconductor layer, and at least one second semiconductor layer. The at least one first semiconductor layer is disposed on the substrate, and the at least one second semiconductor layer is disposed on the at least one first semiconductor layer. The at least one first semiconductor layer includes a first doping portion, a second doping portion, a channel, and a semiconductor film. The second doping portion is adjacent to the first doping portion. The channel is disposed between the first doping portion and the second doping portion, and disposed with the substrate in parallel. The semiconductor film is disposed around the channel.

    Structure and formation method of semiconductor device structure

    公开(公告)号:US10204985B2

    公开(公告)日:2019-02-12

    申请号:US14942639

    申请日:2015-11-16

    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor layer and a second semiconductor layer vertically stacked over a semiconductor substrate. The first semiconductor layer and the second semiconductor layer include different materials. The semiconductor device structure also includes a gate stack covering a first portion of the first semiconductor layer. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element covers the second semiconductor layer and a second portion of the first semiconductor layer. The thickness of the second semiconductor layer is different from the thickness of the second portion.

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