Invention Grant
- Patent Title: Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
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Application No.: US16128863Application Date: 2018-09-12
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Publication No.: US10996553B2Publication Date: 2021-05-04
- Inventor: Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/24 ; G03F1/58 ; G03F1/48 ; G03F1/52 ; H01L21/027

Abstract:
A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.
Public/Granted literature
- US20190146325A1 EXTREME ULTRAVIOLET MASK WITH REDUCED WAFER NEIGHBORING EFFECT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-05-16
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