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1.发明授权公开(公告)号：US10996553B2
公开(公告)日：2021-05-04
申请号：US16128863
申请日：2018-09-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Chang Hsueh , Huan-Ling Lee , Chia-Jen Chen , Hsin-Chang Lee
Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.
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公开(公告)号：US11531262B2
公开(公告)日：2022-12-20
申请号：US17083348
申请日：2020-10-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Wen-Chang Hsueh
Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.
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公开(公告)号：US09341940B2
公开(公告)日：2016-05-17
申请号：US14278678
申请日：2014-05-15
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wen-Chang Hsueh , Chia-Jen Chen , Ta-Cheng Lien , Hsin-Chang Lee
IPC: G03F1/32
Abstract: A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.
Abstract translation: 提供了掩模版和制作掩模版的方法。 在各种实施例中，掩模版包括衬底，图案化的第一衰减层，图案化的第二衰减层和图案化的第三衰减层。 图案化的第一衰减层设置在基板上。 图案化的第二衰减层设置在图案化的第一衰减层上。 图案化的第三衰减层设置在图案化的第二衰减层上。 图案化第一衰减层的第一部分，图案化第二衰减层的第一部分和图案化的第三衰减层作为二值强度掩模部分堆叠在基板上。
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Patent Agency Ranking
公开(公告)号：US11815805B2
公开(公告)日：2023-11-14
申请号：US17707712
申请日：2022-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Chang Hsueh , Hsin-Chang Lee , Ta-Cheng Lien
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.
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公开(公告)号：US09530200B2
公开(公告)日：2016-12-27
申请号：US14309980
申请日：2014-06-20
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Wen-Chang Hsueh , Chia-Jen Chen , Hsin-Chang Lee
CPC classification number: G06T7/0006 , G02B21/0016 , G02B21/367 , G06T7/0004 , G06T7/13 , G06T2207/10061 , G06T2207/30148 , H01L22/12
Abstract: A method and a system for inspection of a patterned structure are provided. In various embodiments, the method for inspection of a patterned structure includes transferring the patterned structure into a microscope. The method further includes acquiring a top-view image of the patterned structure by the microscope. The method further includes transferring the patterned structure out of the microscope and exporting the top-view image to an image analysis processor. The method further includes measuring a difference between a contour of the top-view image and a predetermined layout of the patterned structure by the image analysis processor.
Abstract translation: 提供了一种用于检查图案结构的方法和系统。 在各种实施例中，用于检查图案化结构的方法包括将图案化结构转移到显微镜中。 该方法还包括通过显微镜获取图案化结构的顶视图。 该方法还包括将图案化结构转移出显微镜并将顶视图输出到图像分析处理器。 该方法还包括通过图像分析处理器测量顶视图像的轮廓与图案化结构的预定布局之间的差异。
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公开(公告)号：US11294271B2
公开(公告)日：2022-04-05
申请号：US16863939
申请日：2020-04-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Chang Hsueh , Hsin-Chang Lee , Ta-Cheng Lien
IPC: G03F1/24
Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.
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公开(公告)号：US11143954B2
公开(公告)日：2021-10-12
申请号：US16018444
申请日：2018-06-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Chang Hsueh , Ta-Cheng Lien , Chia-Jen Chen , Hsin-Chang Lee
Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.
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公开(公告)号：US20190391480A1
公开(公告)日：2019-12-26
申请号：US16018444
申请日：2018-06-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wen-Chang Hsueh , Ta-Cheng Lien , Chia-Jen Chen , Hsin-Chang Lee
Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.
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