Invention Grant
- Patent Title: Vertical photodiode
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Application No.: US16292525Application Date: 2019-03-05
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Publication No.: US11107941B2Publication Date: 2021-08-31
- Inventor: Charles Baudot , Sebastien Cremer , Nathalie Vulliet , Denis Pellissier-Tanon
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1851988 20180307
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/0232 ; G02B6/12 ; H01L31/028

Abstract:
A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
Public/Granted literature
- US20190280144A1 VERTICAL PHOTODIODE Public/Granted day:2019-09-12
Information query
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