Invention Grant
- Patent Title: Semiconductor structure cutting process and structures formed thereby
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Application No.: US15909800Application Date: 2018-03-01
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Publication No.: US11114549B2Publication Date: 2021-09-07
- Inventor: Ryan Chia-Jen Chen , Ming-Ching Chang , Yi-Chun Chen , Yu-Hsien Lin , Li-Wei Yin , Tzu-Wen Pan , Cheng-Chung Chang , Shao-Hua Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L21/8238 ; H01L27/092 ; H01L21/84 ; H01L27/12

Abstract:
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.
Public/Granted literature
- US20190165137A1 Semiconductor Structure Cutting Process and Structures Formed Thereby Public/Granted day:2019-05-30
Information query
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