Invention Grant
- Patent Title: 4T4R ternary weight cell with high on/off ratio background
-
Application No.: US16448842Application Date: 2019-06-21
-
Publication No.: US11182686B2Publication Date: 2021-11-23
- Inventor: Ryan M. Hatcher , Titash Rakshit , Jorge Kittl , Rwik Sengupta , Dharmendar Palle , Joon Goo Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: The Farrell Law Firm, P.C.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C13/00 ; G11C11/22 ; G06N5/04 ; G06F17/16

Abstract:
A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, a second FET and a second resistive memory element connected to a drain of the second FET, the drain of the first FET being connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET, a third FET and a third resistive memory element connected to a drain of the third FET, and a fourth FET and a fourth resistive memory element connected to a drain of the fourth FET, the drain of the third FET is connected to a gate of the fourth FET and the drain of the fourth FET being connected to a gate of the third FET.
Public/Granted literature
- US20200279176A1 4T4R TERNARY WEIGHT CELL WITH HIGH ON/OFF RATIO BACKGROUND Public/Granted day:2020-09-03
Information query