Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device having plurality of insulator
-
Application No.: US16643195Application Date: 2018-08-28
-
Publication No.: US11195758B2Publication Date: 2021-12-07
- Inventor: Shunpei Yamazaki , Toshihiko Takeuchi , Tsutomu Murakawa , Hiroki Komagata , Daisuke Matsubayashi , Noritaka Ishihara , Yusuke Nonaka
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2017-170022 20170905,JPJP2017-170023 20170905,JPJP2017-238210 20171213
- International Application: PCT/IB2018/056534 WO 20180828
- International Announcement: WO2019/048983 WO 20190314
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L27/06 ; H01L27/108 ; H01L29/786
Abstract:
A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.
Information query
IPC分类:
