公开(公告)号：US11942370B2

公开(公告)日：2024-03-26

申请号：US17979807

申请日：2022-11-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696 ,  H01L29/66742

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US11804407B2

公开(公告)日：2023-10-31

申请号：US17518614

申请日：2021-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/7869 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US10964787B2

公开(公告)日：2021-03-30

申请号：US16732686

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/105 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49 ,  H01L29/24 ,  H01L29/788

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US12154827B2

公开(公告)日：2024-11-26

申请号：US18383086

申请日：2023-10-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US11508850B2

公开(公告)日：2022-11-22

申请号：US17271716

申请日：2019-08-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US12068198B2

公开(公告)日：2024-08-20

申请号：US17605187

申请日：2020-04-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Shinya Sasagawa ,  Naoto Yamade ,  Takashi Hamada ,  Hiroki Komagata

IPC: H01L21/8234 ,  H01L21/225 ,  H01L21/28 ,  H01L29/66 ,  H01L27/088 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/2253 ,  H01L21/28185 ,  H01L29/6675 ,  H01L27/088 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and a second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

公开(公告)号：US11929426B2

公开(公告)日：2024-03-12

申请号：US17270492

申请日：2019-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Naoki Okuno ,  Hiroki Komagata

IPC: H01L29/66 ,  H01L21/383 ,  H01L21/443 ,  H01L27/12 ,  H01L29/40 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/383 ,  H01L21/443 ,  H01L29/401 ,  H01L27/1207 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device with high reliability is provided. The present invention relates to a method for manufacturing a transistor including an oxide semiconductor. A stacked-layer structure of an oxide semiconductor and an insulator functioning as a gate insulator is subjected to microwave-excited plasma treatment, whereby the carrier concentration of the oxide semiconductor is reduced and the barrier property of the gate insulator is improved. In addition, a conductor functioning as an electrode and the insulator functioning as a gate insulator are formed in contact with the oxide semiconductor and then the microwave-excited plasma treatment is performed, whereby a high-resistance region and a low-resistance region can be formed in the oxide semiconductor in a self-aligned manner. Moreover, the microwave-excited plasma treatment is performed under an atmosphere containing oxygen with a high pressure, whereby a transistor having favorable electrical characteristics can be provided.

公开(公告)号：US11257959B2

公开(公告)日：2022-02-22

申请号：US16766425

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Katsuaki Tochibayashi ,  Kentaro Sugaya

IPC: H01L29/786

Abstract: A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US11817507B2

公开(公告)日：2023-11-14

申请号：US17667655

申请日：2022-02-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Katsuaki Tochibayashi ,  Kentaro Sugaya

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US11195758B2

公开(公告)日：2021-12-07

申请号：US16643195

申请日：2018-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/108 ,  H01L29/786

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.