公开(公告)号：US11282964B2

公开(公告)日：2022-03-22

申请号：US16760050

申请日：2018-11-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hiromi Sawai ,  Ryo Tokumaru ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Sho Nagamatsu ,  Tomoaki Moriwaka

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20140204073A1

公开(公告)日：2014-07-24

申请号：US14219275

申请日：2014-03-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kouhei Toyotaka ,  Hiroyuki Miyake ,  Ryo Arasawa ,  Koji Kusunoki ,  Tsutomu Murakawa

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/20 ,  G09G3/36 ,  G09G3/3688 ,  G09G2320/103 ,  G09G2330/04

摘要： Provided is a liquid crystal display device having a pixel including a transistor and a liquid crystal element and a protection circuit electrically connected to one of a source and a drain of the transistor through a data line. The protection circuit includes a first terminal supplied with a first power supply potential and a second terminal supplied with a second power supply potential higher than the first power supply potential. In a moving image display mode, an image signal is input from the data line to the liquid crystal element through the transistor, and the first power supply potential is set at the first potential. In a still image display mode, supply of the image signal is stopped, and the first power supply potential is set at the second potential. The second potential is substantially the same as the minimum value of the image signal.

摘要翻译： 提供一种液晶显示装置，其具有包括晶体管和液晶元件的像素，以及通过数据线电连接到晶体管的源极和漏极之一的保护电路。 保护电路包括提供有第一电源电位的第一端子和被提供有高于第一电源电位的第二电源电位的第二端子。 在运动图像显示模式中，图像信号通过晶体管从数据线输入到液晶元件，并且第一电源电位被设置为第一电位。 在静止图像显示模式下，停止图像信号的供给，将第一电源电位设定为第二电位。 第二电位与图像信号的最小值基本相同。

公开(公告)号：US11211500B2

公开(公告)日：2021-12-28

申请号：US16760052

申请日：2018-11-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hiromi Sawai ,  Ryo Tokumaru ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Sho Nagamatsu ,  Tomoaki Moriwaka

IPC分类号： H01L29/786 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

摘要： A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third oxide over the second oxide, a second insulator over the third oxide, a third conductor that is located over the second insulator and overlaps with the third oxide, a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and a fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator. The fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide.

公开(公告)号：US10964787B2

公开(公告)日：2021-03-30

申请号：US16732686

申请日：2020-01-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/105 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49 ,  H01L29/24 ,  H01L29/788

摘要： A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US10658395B2

公开(公告)日：2020-05-19

申请号：US15925122

申请日：2018-03-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hajime Kimura ,  Tsutomu Murakawa ,  Kosei Nei ,  Hiroaki Honda ,  Yusuke Shino

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L21/84 ,  G11C11/404 ,  H01L27/06 ,  H01L21/8258 ,  G11C11/405

摘要： A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

公开(公告)号：US09825181B2

公开(公告)日：2017-11-21

申请号：US15374356

申请日：2016-12-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Masashi Tsubuku ,  Kazuya Sugimoto ,  Tsutomu Murakawa ,  Motoki Nakashima ,  Shinpei Matsuda ,  Noritaka Ishihara ,  Daisuke Kurosaki ,  Toshimitsu Obonai ,  Hiroshi Kanemura ,  Junichi Koezuka

IPC分类号： H01L29/22 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H03K17/687 ,  H01L27/105 ,  G09G3/20

CPC分类号： H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

摘要： A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US09647152B2

公开(公告)日：2017-05-09

申请号：US14190126

申请日：2014-02-26

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Jun Koyama ,  Tomokazu Yokoi ,  Tsutomu Murakawa

IPC分类号： H01L31/02 ,  H01L31/0296 ,  G01J1/42 ,  G01J1/02 ,  G01J1/44

CPC分类号： H01L31/0296 ,  G01J1/0219 ,  G01J1/429 ,  G01J1/44 ,  G01J2001/4473

摘要： A sensor circuit includes a transistor comprising an oxide semiconductor; a first circuit which supplies one of a first potential and a second potential; a first switch; a second switch; and a second circuit to which a current flowing between a source and a drain of the transistor is applied via the second switch when the first potential is applied to a gate of the transistor. The first potential is lower than a potential of the source or a potential of the drain of the transistor, and the second potential is higher than the potential of the source or the potential of the drain of the transistor. The first switch electrically connects the source and the drain of the transistor when the second potential is applied to the gate of the transistor, and electrically isolates them when the first potential is applied to the gate of the transistor.

公开(公告)号：US09092042B2

公开(公告)日：2015-07-28

申请号：US13908121

申请日：2013-06-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tsuji ,  Kaori Ikada

IPC分类号： G05F3/16 ,  G05F1/00 ,  G05F1/56 ,  G05F3/24

CPC分类号： G05F3/16 ,  G05F1/56 ,  G05F3/242

摘要： One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.

摘要翻译： 本发明的一个目的是提供一种具有改善的噪声容限的调节器电路。 在包括基于第一电源端子和第二电源端子之间的电位差产生参考电压的偏置电路的调节器电路中，以及基于参考电位向输出端子输出电位的电压调节器 在偏置电路的输入端，在电源端子与偏置电路中包含的晶体管的栅极连接的节点之间设置有旁路电容器。

公开(公告)号：US11257959B2

公开(公告)日：2022-02-22

申请号：US16766425

申请日：2018-11-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Katsuaki Tochibayashi ,  Kentaro Sugaya

IPC分类号： H01L29/786

摘要： A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US11107929B2

公开(公告)日：2021-08-31

申请号：US16690891

申请日：2019-11-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hideomi Suzawa

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/417

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a third insulator over the second insulator, a fourth insulator and a first conductor over the third insulator, a fifth insulator over the fourth insulator and the first conductor, a first oxide over the fifth insulator, a second conductor and a third conductor over the first oxide, a second oxide over the first oxide and between the second conductor and the third conductor, a sixth insulator over the second oxide, and a fourth conductor over the sixth insulator. The hydrogen concentration of the second insulator is lower than that of the first insulator. The hydrogen concentration of the third insulator is lower than that of the second insulator.