- 专利标题： Gate channel length control in VFET
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申请号： US16366516申请日： 2019-03-27
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公开(公告)号： US11201092B2公开(公告)日： 2021-12-14
- 发明人: Injo Ok , Choonghyun Lee , Soon-Cheon Seo , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 L. Jeffrey Kelly, Esq.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/66 ; H01L27/088 ; H01L21/8234 ; H01L21/28
摘要：
A semiconductor structure is provided utilizing a cost effective method in which the vertical gate channel length is substantially the same for vertical field effect transistors (VFETs) that are present in a dense device region and an isolated device region. The VFETs have improved uniformity, device functionality and better yield. No additional lithographic process is used in making such a semiconductor structure.
公开/授权文献
- US20200312723A1 GATE CHANNEL LENGTH CONTROL IN VFET 公开/授权日：2020-10-01
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