Polishing slurry and method of polishing substrate by using the polishing slurry

Invention Grant

US11203703B2 Polishing slurry and method of polishing substrate by using the polishing slurry 有权

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Patent Title: Polishing slurry and method of polishing substrate by using the polishing slurry
Application No.: US16247730

Application Date: 2019-01-15
Publication No.: US11203703B2

Publication Date: 2021-12-21
Inventor: Hyunjin Cho , Joonhwa Bae , Byoungkwon Choo , Woojin Cho , Jinhyung Park
Applicant: SAMSUNG DISPLAY CO., LTD. , UBmaterials Inc.
Applicant Address: KR Yongin-si; KR Yongin-si
Assignee: SAMSUNG DISPLAY CO., LTD.,UBmaterials Inc.
Current Assignee: SAMSUNG DISPLAY CO., LTD.,UBmaterials Inc.
Current Assignee Address: KR Yongin-si; KR Yongin-si
Agency: Kile Park Reed & Houtteman PLLC
Priority: KR10-2018-0032344 20180320
Main IPC: H01L21/321
IPC: H01L21/321 ; H01L21/3105 ; H01L21/306 ; H01L21/302 ; C09K3/14 ; C09G1/04 ; C09G1/02 ; C09G1/00 ; B24B37/04

Polishing slurry and method of polishing substrate by using the polishing slurry

Abstract:

A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

Public/Granted literature

US20190292406A1 POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE BY USING THE POLISHING SLURRY Public/Granted day:2019-09-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理