Invention Grant
- Patent Title: Sputtering targets and devices including Mo, Nb, and Ta, and methods
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Application No.: US16115648Application Date: 2018-08-29
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Publication No.: US11306388B2Publication Date: 2022-04-19
- Inventor: Shuwei Sun , Gary Alan Rozak , Qi Zhang , Barbara Cox , Yen-Te Lee
- Applicant: H.C. STARCK INC.
- Applicant Address: US MA Newton
- Assignee: H.C. STARCK INC.
- Current Assignee: H.C. STARCK INC.
- Current Assignee Address: US MA Newton
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: C23C14/22
- IPC: C23C14/22 ; C23C14/08 ; C23C14/14 ; C23C14/16 ; C23C14/34 ; C23C14/58 ; H01J37/34

Abstract:
Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
Public/Granted literature
- US20190066987A1 SPUTTERING TARGETS AND DEVICES INCLUDING Mo, Nb, and Ta, AND METHODS Public/Granted day:2019-02-28
Information query
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