公开(公告)号：US11306388B2

公开(公告)日：2022-04-19

申请号：US16115648

申请日：2018-08-29

Applicant: H.C. STARCK INC.

Inventor： Shuwei Sun ,  Gary Alan Rozak ,  Qi Zhang ,  Barbara Cox ,  Yen-Te Lee

IPC: C23C14/22 ,  C23C14/08 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  C23C14/58 ,  H01J37/34

Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

公开(公告)号：US20190066987A1

公开(公告)日：2019-02-28

申请号：US16115648

申请日：2018-08-29

Applicant: H.C. STARCK INC.

Inventor： Shuwei SUN ,  Gary Alan ROZAK ,  Qi ZHANG ,  Barbara COX ,  Yen-Te Lee

IPC: H01J37/34 ,  C23C14/14 ,  C22C27/04 ,  C23C14/34 ,  C23C14/16 ,  C23C14/08 ,  C22C21/00

Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.