Invention Grant
- Patent Title: Techniques for vertical cavity surface emitting laser oxidation
-
Application No.: US17070508Application Date: 2020-10-14
-
Publication No.: US11309685B2Publication Date: 2022-04-19
- Inventor: Chen Yu Chen , Ming Chyi Liu , Jhih-Bin Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/02 ; H01S5/20 ; H01S5/028 ; H01S5/187

Abstract:
Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.
Public/Granted literature
- US20210028601A1 TECHNIQUES FOR VERTICAL CAVITY SURFACE EMITTING LASER OXIDATION Public/Granted day:2021-01-28
Information query