公开(公告)号：US11309685B2

公开(公告)日：2022-04-19

申请号：US17070508

申请日：2020-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen Yu Chen ,  Ming Chyi Liu ,  Jhih-Bin Chen

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/20 ,  H01S5/028 ,  H01S5/187

Abstract: Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.

公开(公告)号：US11164844B2

公开(公告)日：2021-11-02

申请号：US16568605

申请日：2019-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen Yu Chen ,  Ming Chyi Liu ,  Eugene Chen

IPC: H01L23/00 ,  H01L33/00 ,  H01L33/62 ,  H01S5/18 ,  H01L25/075

Abstract: In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer.

公开(公告)号：US20210028601A1

公开(公告)日：2021-01-28

申请号：US17070508

申请日：2020-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen Yu Chen ,  Ming Chyi Liu ,  Jhih-Bin Chen

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/20 ,  H01S5/028 ,  H01S5/187

Abstract: Some embodiments relate to a vertical cavity surface emitting laser (VCSEL) device including a VCSEL structure overlying a substrate. The VCSEL structure includes a first reflector, a second reflector, and an optically active region disposed between the first and second reflectors. A first spacer laterally encloses the second reflector. The first spacer comprises a first plurality of protrusions disposed along a sidewall of the second reflector.

公开(公告)号：US20210082866A1

公开(公告)日：2021-03-18

申请号：US16568605

申请日：2019-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen Yu Chen ,  Ming Chyi Liu ,  Eugene Chen

IPC: H01L23/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62 ,  H01S5/18

Abstract: In some embodiments, the present disclosure relates to a method of forming a package assembly. A wet etch stop layer is formed over a frontside of a semiconductor substrate. A sacrificial semiconductor layer is formed over the wet etch stop layer, and a dry etch stop layer is formed over the sacrificial semiconductor layer. A stack of semiconductor device layers may be formed over the dry etch stop layer. A bonding process is performed to bond the stack of semiconductor device layers to a frontside of an integrated circuit die, wherein the frontside of the semiconductor substrate faces the frontside of the integrated circuit die. A wet etching process is performed to remove the semiconductor substrate, and a dry etching process is performed to remove the wet etch stop layer and the sacrificial semiconductor layer.

公开(公告)号：US20200076162A1

公开(公告)日：2020-03-05

申请号：US16122018

申请日：2018-09-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen Yu Chen ,  Ming Chyi Liu ,  Jhih-Bin Chen

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/187 ,  H01S5/20 ,  H01S5/028

Abstract: Some embodiments relate to a method for manufacturing a vertical cavity surface emitting laser. The method includes forming an optically active layer over a first reflective layer and forming a second reflective layer over the optically active layer. Forming a masking layer over the second reflective layer, where the masking layer leaves a sacrificial portion of the second reflective layer exposed. A first etch is performed to remove the sacrificial portion of the second reflective layer, defining a second reflector. Forming a first spacer covering outer sidewalls of the second reflector and masking layer. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer while leaving a central region of the optically active layer un-oxidized. A second etch is performed to remove a portion of the oxidized peripheral region, defining an optically active region. Forming a second spacer covering outer sidewalls of the first spacer, the optically active region, and the first reflector.