- 专利标题: FinFET quantum structures utilizing quantum particle tunneling through oxide
-
申请号: US16445332申请日: 2019-06-19
-
公开(公告)号: US11327344B2公开(公告)日: 2022-05-10
- 发明人: Dirk Robert Walter Leipold , George Adrian Maxim , Michael Albert Asker
- 申请人: equal1.labs Inc.
- 申请人地址: US CA Fremont
- 专利权人: equal1.labs Inc.
- 当前专利权人: equal1.labs Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Zaretsky Group PC
- 代理商 Howard Zaretsky
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; G02F1/017 ; B82Y10/00 ; G06N10/00 ; H01L29/12 ; H01L29/66 ; H03K19/195 ; B82Y15/00 ; G06F1/20 ; G06F11/07 ; G06F15/16 ; G06N99/00 ; G11C19/32 ; H01L21/02 ; H01L27/088 ; H01L27/18 ; H01L29/15 ; H01L29/417 ; H01L33/04 ; H01L39/22 ; H03M1/34 ; H03M1/66 ; H03K3/38 ; H03M13/15
摘要:
Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
公开/授权文献
信息查询
IPC分类: