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公开(公告)号：US11454833B2
公开(公告)日：2022-09-27
申请号：US16445316
申请日：2019-06-19
申请人： equal1.labs Inc.
IPC分类号： H01L29/06 , G02F1/017 , B82Y10/00 , G06N10/00 , H01L29/12 , H01L29/66 , H03K19/195 , B82Y15/00 , G06F1/20 , G06F11/07 , G06F15/16 , G06N99/00 , G11C19/32 , H01L21/02 , H01L27/088 , H01L27/18 , H01L29/15 , H01L29/417 , H01L33/04 , H01L39/22 , H03M1/34 , H03M1/66 , H03K3/38 , H03M13/15 , G06N10/70
摘要： Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
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公开(公告)号：US11327344B2
公开(公告)日：2022-05-10
申请号：US16445332
申请日：2019-06-19
申请人： equal1.labs Inc.
IPC分类号： H01L29/06 , G02F1/017 , B82Y10/00 , G06N10/00 , H01L29/12 , H01L29/66 , H03K19/195 , B82Y15/00 , G06F1/20 , G06F11/07 , G06F15/16 , G06N99/00 , G11C19/32 , H01L21/02 , H01L27/088 , H01L27/18 , H01L29/15 , H01L29/417 , H01L33/04 , H01L39/22 , H03M1/34 , H03M1/66 , H03K3/38 , H03M13/15
摘要： Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
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公开(公告)号：US10903413B2
公开(公告)日：2021-01-26
申请号：US16734337
申请日：2020-01-05
申请人： equal1.labs Inc.
摘要： A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions. In addition, the edge of the raised diffusion layer may be placed either in the gate region or the active layer region.
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公开(公告)号：US10793431B2
公开(公告)日：2020-10-06
申请号：US16445658
申请日：2019-06-19
申请人： equal1.labs Inc.
摘要： Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.
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5.发明申请公开(公告)号：US20200227523A1
公开(公告)日：2020-07-16
申请号：US16747445
申请日：2020-01-20
申请人： equal1.labs Inc.
IPC分类号： H01L29/12 , H01L29/775 , G06N10/00 , H01L29/66
摘要： Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar and 3D (e.g., FinFET) semiconductor processes.
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6.发明申请公开(公告)号：US20200227522A1
公开(公告)日：2020-07-16
申请号：US16740567
申请日：2020-01-13
申请人： equal1.labs Inc.
IPC分类号： H01L29/12 , G02F1/017 , G06N10/00 , H01L29/775
摘要： A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates. Thus, each gate control circuit is shared across several qubits which are located sufficiently far from each other to prevent interference. This substantially reduces the number of control signals and control logic that required in the structure.
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公开(公告)号：US20200161456A1
公开(公告)日：2020-05-21
申请号：US16747237
申请日：2020-01-20
申请人： equal1.labs Inc.
摘要： Novel and useful quantum structures having a continuous fully depleted well with control gates that form two quantum dot on either side of the gate. Appropriate potentials are applied to the well and control gate to control quantum tunneling between quantum dots thereby enabling quantum operations to occur. Qubits are realized by modulating applied gate potential to control tunneling through a quantum transport path between two or more sections of the well. Complex structures with a higher number of quantum dots per continuous well and a larger number of wells can be fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. An injection device permits tunneling of a single quantum particle from a classic side to a quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
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公开(公告)号：US10562764B2
公开(公告)日：2020-02-18
申请号：US16446313
申请日：2019-06-19
申请人： equal1.labs Inc.
摘要： A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.
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9.发明申请公开(公告)号：US20190393328A1
公开(公告)日：2019-12-26
申请号：US16445325
申请日：2019-06-19
申请人： equal1.labs Inc.
摘要： Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
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10.发明授权公开(公告)号：US11423322B2
公开(公告)日：2022-08-23
申请号：US16734346
申请日：2020-01-05
申请人： equal1.labs Inc.
摘要： A novel and useful fully integrated quantum computer containing both quantum core circuitry and associated classical electronic control circuits on the same monolithic die. The integrated quantum computer avoids ESD loading on the quantum structures and minimizes the need for long interconnects with resultant large parasitic inductances and capacitances. Such parasitics reduce the maximum operating frequency of the realized quantum core structures. A cryostat unit functions to provide several temperatures to the quantum computer including a temperature to cool the quantum core to approximately 4° K and the interface SoC to 77° K. Alternatively, the interface circuitry is also integrated with the main QPU on the same die. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations.
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