- Patent Title: Spin orbit torque (SOT) memory devices and methods of fabrication
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Application No.: US16024411Application Date: 2018-06-29
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Publication No.: US11362263B2Publication Date: 2022-06-14
- Inventor: Noriyuki Sato , Tanay Gosavi , Justin Brockman , Sasikanth Manipatruni , Kaan Oguz , Kevin O'Brien , Christopher Wiegand , Angeline Smith , Tofizur Rahman , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11C11/16 ; H01L43/12 ; H01L43/10 ; B82Y25/00
Abstract:
A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a magnetic tunnel junction (MTJ) device on a portion of the electrode. The electrode has a first SOC layer and a second SOC layer on a portion of the first SOC layer, where at least a portion of the first SOC layer at an interface with the second SOC layer includes oxygen.
Public/Granted literature
- US20200006631A1 SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND METHODS OF FABRICATION Public/Granted day:2020-01-02
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