- 专利标题： Spin orbit torque (SOT) memory devices and methods of fabrication
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申请号： US16024411申请日： 2018-06-29
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公开(公告)号： US11362263B2公开(公告)日： 2022-06-14
- 发明人: Noriyuki Sato , Tanay Gosavi , Justin Brockman , Sasikanth Manipatruni , Kaan Oguz , Kevin O'Brien , Christopher Wiegand , Angeline Smith , Tofizur Rahman , Ian Young
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Essential Patents Group, LLP
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; G11C11/16 ; H01L43/12 ; H01L43/10 ; B82Y25/00
摘要：
A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a magnetic tunnel junction (MTJ) device on a portion of the electrode. The electrode has a first SOC layer and a second SOC layer on a portion of the first SOC layer, where at least a portion of the first SOC layer at an interface with the second SOC layer includes oxygen.
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