Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US16806622Application Date: 2020-03-02
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Publication No.: US11367624B2Publication Date: 2022-06-21
- Inventor: Junichi Hashimoto , Kaori Narumiya , Kosuke Horibe , Soichi Yamazaki , Kei Watanabe , Yusuke Kondo , Mitsuhiro Omura , Takehiro Kondoh , Yuya Matsubara , Junya Fujita , Toshiyuki Sasaki
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2019-159683 20190902
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L27/11556 ; H01L27/11582
Abstract:
According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.
Public/Granted literature
- US20210066090A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2021-03-04
Information query
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