公开(公告)号：US12300504B2

公开(公告)日：2025-05-13

申请号：US17005568

申请日：2020-08-28

Applicant: Kioxia Corporation

Inventor： Junichi Hashimoto ,  Mitsuhiro Omura ,  Toshiyuki Sasaki

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/311

Abstract: A film processing method includes forming a target film, the target film having an upper surface. The method includes forming a carbon film on the upper surface of the target film. The method includes performing a first etching to format least one recess in the target film, with the carbon film serving as a mask. The method includes performing a second etching, by directing an ion beam through the at least one recess, to increase a depth of the at least one recess.

公开(公告)号：US11373865B2

公开(公告)日：2022-06-28

申请号：US17004216

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Takehiro Kondoh ,  Junichi Hashimoto ,  Soichi Yamazaki ,  Yuya Matsubara

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

公开(公告)号：US12040155B2

公开(公告)日：2024-07-16

申请号：US17472444

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Junichi Hashimoto ,  Toshiyuki Sasaki

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/48 ,  C23C16/52 ,  H01J37/147 ,  H01J37/32 ,  H01L21/02 ,  H01L21/263 ,  H01L21/768 ,  H10B43/50 ,  H10B43/27

CPC classification number: H01J37/1474 ,  C23C16/047 ,  C23C16/402 ,  C23C16/486 ,  C23C16/52 ,  H01J37/3233 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/2633 ,  H01L21/76819 ,  H10B43/50 ,  H01J2237/334 ,  H10B43/27

Abstract: A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

公开(公告)号：US11367624B2

公开(公告)日：2022-06-21

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi Hashimoto ,  Kaori Narumiya ,  Kosuke Horibe ,  Soichi Yamazaki ,  Kei Watanabe ,  Yusuke Kondo ,  Mitsuhiro Omura ,  Takehiro Kondoh ,  Yuya Matsubara ,  Junya Fujita ,  Toshiyuki Sasaki

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.