公开(公告)号：US11367624B2

公开(公告)日：2022-06-21

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi Hashimoto ,  Kaori Narumiya ,  Kosuke Horibe ,  Soichi Yamazaki ,  Kei Watanabe ,  Yusuke Kondo ,  Mitsuhiro Omura ,  Takehiro Kondoh ,  Yuya Matsubara ,  Junya Fujita ,  Toshiyuki Sasaki

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

公开(公告)号：US11373865B2

公开(公告)日：2022-06-28

申请号：US17004216

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Takehiro Kondoh ,  Junichi Hashimoto ,  Soichi Yamazaki ,  Yuya Matsubara

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/02

Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.