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    Method for producing semiconductor device
    1.
    发明授权
    Method for producing semiconductor device 有权

    公开(公告)号：US11935750B2

    公开(公告)日：2024-03-19

    申请号：US17184828

    申请日：2021-02-25

    Applicant: Kioxia Corporation

    Inventor： Kei Watanabe ,  Toshiyuki Sasaki ,  Soichi Yamazaki ,  Shunsuke Ochiai ,  Yuya Matsubara

    IPC: H01L21/033

    CPC classification number: H01L21/0332

    Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

    Semiconductor memory device
    2.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US11864389B2

    公开(公告)日：2024-01-02

    申请号：US17400627

    申请日：2021-08-12

    Applicant: Kioxia Corporation

    Inventor： Takashi Fukushima ,  Toshiyuki Sasaki

    IPC: H10B43/30 ,  H10B41/30

    CPC classification number: H10B43/30 ,  H10B41/30

    Abstract: A semiconductor memory device includes a substrate; a plurality of first conductive layers and first insulating layers stacked in alternation; a first semiconductor layer opposed to first conductive layers and first insulating layers; a second semiconductor layer; a second insulating layer that covers outer peripheral surface of the first semiconductor layer; and a third insulating layer disposed at a position different from first conductive layers, first insulating layers, and the second insulating layer, the third insulating layer having one end in contact with the second semiconductor, the third insulating layer having another end farther from the second semiconductor layer than the second insulating layer. A metal oxide film is disposed on a surface on the third insulating layer side of the second insulating layer. A metal oxide film is absent on a surface on the third insulating layer side of the plurality of first insulating layers.

    Manufacturing method of semiconductor device and etching gas
    5.
    发明授权
    Manufacturing method of semiconductor device and etching gas 有权

    公开(公告)号：US11367622B2

    公开(公告)日：2022-06-21

    申请号：US17022640

    申请日：2020-09-16

    Applicant: Kioxia Corporation

    Inventor： Mitsunari Horiuchi ,  Toshiyuki Sasaki ,  Tomo Hasegawa

    IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/3065

    Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

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