Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having a doped work-function layer
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Application No.: US16889217Application Date: 2020-06-01
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Publication No.: US11387344B2Publication Date: 2022-07-12
- Inventor: Chia-Ching Lee , Hung-Chin Chung , Chung-Chiang Wu , Hsuan-Yu Tung , Kuan-Chang Chiu , Chien-Hao Chen , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8238 ; H01L21/28 ; H01L21/8234 ; H01L29/49 ; H01L29/40 ; H01L29/78
Abstract:
A semiconductor device and method of manufacture are provided. In some embodiments a treatment process is utilized to treat a work function layer. The treatment prevents excessive oxidation of the work function layer during subsequent processing steps, such as application of a subsequent photoresist material, thereby allowing the work function layer to be thinner than otherwise.
Public/Granted literature
- US20210273070A1 Semiconductor Devices and Methods of Manufacture Public/Granted day:2021-09-02
Information query
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