Invention Grant
- Patent Title: Vertical non-volatile memory devices and methods of programming the same
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Application No.: US16850244Application Date: 2020-04-16
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Publication No.: US11444098B2Publication Date: 2022-09-13
- Inventor: Younghwan Son , Seungwon Lee , Seogoo Kang , Juyoung Lim , Jeehoon Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0109722 20190904
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/51 ; H01L29/49 ; H01L23/528 ; H01L23/522 ; G11C16/10 ; G11C16/04 ; G11C16/26 ; G11C11/56 ; H01L27/11565 ; H01L21/311 ; H01L21/28
Abstract:
A vertical non-volatile memory device includes a channel on a substrate and extending in a first direction perpendicular to an upper surface of the substrate, a first charge storage structure on an outer sidewall of the channel, a second charge storage structure on an inner sidewall of the channel, first gate electrodes spaced apart from each other in the first direction on the substrate, each which surrounds the first charge storage structure, and a second gate electrode on an inner sidewall of the second charge storage structure.
Public/Granted literature
- US20210066344A1 VERTICAL NON-VOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING THE SAME Public/Granted day:2021-03-04
Information query
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