The present disclosure provides a method for adjusting implant parameter conditions in semiconductor processing by wafer and by wafer zone using in-line measurements from previous operations and a feed-forward computer model. The feed-forward model is based on a sensitivity map of in-line measured data and its effect of electrical performance. Feed-forward computer models that adjust implant parameters by wafer and by zone improve both wafer-to-wafer and within wafer electrical uniformity in semiconductor devices.