Invention Grant
- Patent Title: Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
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Application No.: US16012672Application Date: 2018-06-19
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Publication No.: US11476412B2Publication Date: 2022-10-18
- Inventor: Tanay Gosavi , Sasikanth Manipatruni , Kaan Oguz , Noriyuki Sato , Kevin O'Brien , Benjamin Buford , Christopher Wiegand , Angeline Smith , Tofizur Rahman , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L43/10 ; H01L43/08 ; G11C11/16 ; G11C11/18 ; H01F10/32 ; B82Y25/00

Abstract:
An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.
Public/Granted literature
- US20190386205A1 PERPENDICULAR EXCHANGE BIAS WITH ANTI-FERROMAGNET FOR SPIN ORBIT COUPLING BASED MEMORY Public/Granted day:2019-12-19
Information query
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