Invention Grant
- Patent Title: Low-temperature passivation of ferroelectric integrated circuits for enhanced polarization performance
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Application No.: US16056827Application Date: 2018-08-07
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Publication No.: US11495607B2Publication Date: 2022-11-08
- Inventor: Huang-Chun Wen , Richard Allen Bailey , Antonio Guillermo Acosta , John A. Rodriguez , Scott Robert Summerfelt , Kemal Tamer San
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/11507
- IPC: H01L27/11507 ; H01L21/02 ; H01L23/31 ; H01L21/56 ; H01L23/00

Abstract:
Curing of a passivation layer applied to the surface of a ferroelectric integrated circuit so as to enhance the polarization characteristics of the ferroelectric structures. A passivation layer, such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer is cured by exposure to a high temperature, below the Curie temperature of the ferroelectric material, for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material. Polarization may be further enhanced by polarizing the ferroelectric material prior to the cure process.
Public/Granted literature
- US20180374861A1 Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance Public/Granted day:2018-12-27
Information query
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