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公开(公告)号：US11834331B2
公开(公告)日：2023-12-05
申请号：US17514282
申请日：2021-10-29
CPC分类号： B81C1/00333 , B81B7/0077 , H01H45/02 , B81B2203/0315 , B81C2203/019 , B81C2203/0136 , H01H1/0036
摘要： A micro-electromechanical system (MEMS) device includes a moveable element within a cavity. The MEMS device also includes a first layer over the cavity, the first layer having a first hole and a second hole. The first hole has a first diameter. The second hole has a second diameter. The second diameter is larger than the first diameter, and the second hole is farther from the moveable element than the first hole. The first hole is sealed with a first dielectric material. The second hole is sealed with a second dielectric material. The cavity filled with a gas at a pressure of at least approximately 10 torr.
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公开(公告)号：US11791296B2
公开(公告)日：2023-10-17
申请号：US17544888
申请日：2021-12-07
发明人： Scott Robert Summerfelt , Benjamin Stassen Cook , Ralf Jakobskrueger Muenster , Sreenivasan Kalyani Koduri
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/13005 , H01L2224/13023 , H01L2224/13026 , H01L2224/13078 , H01L2224/279 , H01L2224/29078 , H01L2224/3207 , H01L2224/83895 , H01L2224/83896
摘要： In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.
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公开(公告)号：US11387919B2
公开(公告)日：2022-07-12
申请号：US16590354
申请日：2019-10-01
摘要： In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.
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公开(公告)号：US09035458B2
公开(公告)日：2015-05-19
申请号：US14158948
申请日：2014-01-20
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/02 , H01L21/108 , H01L23/48 , H01L23/52 , H01L23/528 , H01L23/525 , H01L21/768 , H01L23/485 , H01L23/522 , H01L27/06
CPC分类号： H01L23/528 , H01L21/76816 , H01L21/76838 , H01L21/76843 , H01L23/485 , H01L23/5226 , H01L23/5256 , H01L23/5283 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit contains lower components in the substrate, a PMD layer, upper components over the PMD layer, lower contacts in the PMD layer connecting some upper components to some lower components, an ILD layer over the upper components, metal interconnect lines over the ILD layer, and upper contacts connecting some upper components to some metal interconnect lines, and also includes annular stacked contacts of lower annular contacts aligned with upper annular contacts. The lower contacts and upper contacts each have a metal liner and a contact metal on the liner. The lower annular contacts have at least one ring of liner metal and contact metal surrounding a pillar of PMD material, and the upper contacts have at least one ring of liner metal and contact metal surrounding a pillar of ILD material. The annular stacked contacts connect the metal interconnects to the lower components.
摘要翻译： 集成电路在衬底中包含较低的组件，PMD层，PMD层上的上部组件，PMD层中的下部触点将一些上部组件连接到某些较低组件，上部组件上的ILD层，ILD上的金属互连线 层和上部触点，其将一些上部部件连接到某些金属互连线，并且还包括与上部环形触点对准的下部环形触点的环形堆叠触点。 下触点和上接触件都具有衬垫上的金属衬垫和接触金属。 下环形触头具有至少一个衬垫金属环和围绕PMD材料柱的接触金属，并且上触点具有至少一个衬垫金属环和围绕ILD材料柱的接触金属。 环形堆叠的触点将金属互连件连接到下部组件。
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公开(公告)号：US11567026B2
公开(公告)日：2023-01-31
申请号：US17105142
申请日：2020-11-25
IPC分类号： G01N27/22 , G01N27/416
摘要： For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.
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公开(公告)号：US11487381B2
公开(公告)日：2022-11-01
申请号：US16512020
申请日：2019-07-15
发明人： Wei-Yan Shih , Steve Kummerl , Mark Stephen Toth , Alok Lohia , Terry Lee Sculley , Seung Bae Lee , Scott Robert Summerfelt
摘要： An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.
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公开(公告)号：US20220345228A1
公开(公告)日：2022-10-27
申请号：US17860087
申请日：2022-07-07
摘要： In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.
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公开(公告)号：US11251138B2
公开(公告)日：2022-02-15
申请号：US16717262
申请日：2019-12-17
发明人： Scott Robert Summerfelt , Thomas Dyer Bonifield , Sreeram Subramanyam Nasum , Peter Smeys , Benjamin Stassen Cook
摘要： In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.
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公开(公告)号：US20210372960A1
公开(公告)日：2021-12-02
申请号：US17105142
申请日：2020-11-25
IPC分类号： G01N27/22 , G01N27/416
摘要： For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.
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公开(公告)号：US20200168747A1
公开(公告)日：2020-05-28
申请号：US16668004
申请日：2019-10-30
IPC分类号： H01L29/88 , H01L23/522 , H01L29/66
摘要： In an integrated circuit, a metal-insulator-metal (MIM) diode includes: a first metallization structure level having a first metal layer; a first dielectric layer over the first metal layer; a metal contact or via on the first metal layer and extending through a portion of the first dielectric layer; and a second metallization structure level having a second metal layer; and a second dielectric layer over the second metal layer. The diode has a first electrode on the metal contact or via, a multilayer dielectric structure on the first electrode, and a second electrode between the multilayer dielectric structure and the second metal layer.
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