- 专利标题： Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate
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申请号： US17166692申请日： 2021-02-03
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公开(公告)号： US11515217B2公开(公告)日： 2022-11-29
- 发明人: Takashi Ando , Choonghyun Lee , Pouya Hashemi , Jingyun Zhang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Robert Sullivan
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L21/8238 ; H01L29/51 ; H01L21/28 ; H01L29/08 ; H01L27/092 ; H01L29/78 ; H01L29/10 ; H01L29/49
摘要：
A method of forming a complementary metal oxide semiconductor (CMOS) device is provided. The method includes forming a separate gate structure on each of a pair of vertical fins, wherein the gate structures include a gate dielectric layer and a gate metal layer, and forming a protective liner layer on the gate structures. The method further includes heat treating the pair of gate structures, and replacing the protective liner layer with an encapsulation layer. The method further includes exposing a portion of the gate dielectric layer by recessing the encapsulation layer. The method further includes forming a top source/drain on the top surface of one of the pair of vertical fins, and subjecting the exposed portion of the gate dielectric layer to a second heat treatment conducted in an oxidizing atmosphere.
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