- 专利标题： Cut first self-aligned litho-etch patterning
-
申请号： US16163878申请日： 2018-10-18
-
公开(公告)号： US11521857B2公开(公告)日： 2022-12-06
- 发明人: Kuan-Wei Huang , Chia-Ying Lee , Ming-Chung Liang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Eschweiler & Potashnik, LLC
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/033 ; H01L21/768 ; H01L27/11 ; H01L21/461
摘要：
The present disclosure, in some embodiments, relates to a method of performing an etch process. The method is performed by forming a first plurality of openings defined by first sidewalls of a mask disposed over a substrate. A cut layer is between two of the first plurality of openings. A spacer is formed onto the first sidewalls of the mask and a second plurality of openings are formed. The second plurality of openings are defined by second sidewalls of the mask and are separated by the spacer. The substrate is etched according to the mask and the spacer.
公开/授权文献
- US20190051523A1 CUT FIRST SELF-ALIGNED LITHO-ETCH PATTERNING 公开/授权日：2019-02-14
信息查询
IPC分类:
