Invention Grant
- Patent Title: Process for tuning via profile in dielectric material
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Application No.: US17140766Application Date: 2021-01-04
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Publication No.: US11532692B2Publication Date: 2022-12-20
- Inventor: Chun Kai Tzeng , Cheng Jen Lin , Yung-Ching Chao , Ming-Da Cheng , Mirng-Ji Lii
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L49/02 ; H01L21/311 ; H01L23/522
Abstract:
A method of forming an integrated circuit structure includes forming a first magnetic layer, forming a first conductive line over the first magnetic layer, and coating a photo-sensitive coating on the first magnetic layer. The photo-sensitive coating includes a first portion directly over the first conductive line, and a second portion offset from the first conductive line. The first portion is joined to the second portion. The method further includes performing a first light-exposure on the first portion of the photo-sensitive coating, performing a second light-exposure on both the first portion and the second portion of the photo-sensitive coating, developing the photo-sensitive coating, and forming a second magnetic layer over the photo-sensitive coating.
Public/Granted literature
- US20210151550A1 Process for Tuning Via Profile in Dielectric Material Public/Granted day:2021-05-20
Information query
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