- 专利标题： Selective gate spacers for semiconductor devices
-
申请号： US17154755申请日： 2021-01-21
-
公开(公告)号： US11532724B2公开(公告)日： 2022-12-20
- 发明人: Scott B. Clendenning , Szuya S. Liao , Florian Gstrein , Rami Hourani , Patricio E. Romero , Grant M. Kloster , Martin M. Mitan
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Essential Patents Group, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/304 ; H01L29/161 ; H01L29/06 ; H01L21/265 ; H01L29/423 ; H01L29/51 ; H01L29/775 ; H01L21/28 ; H01L29/49 ; H01L21/266
摘要：
Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are discussed. Such techniques include forming a blocking material on a semiconductor fin, disposing a gate having a different surface chemistry than the blocking material on a portion of the blocking material, forming a selective conformal layer on the gate but not on a portion of the blocking material, and removing exposed portions of the blocking material.
公开/授权文献
- US20210143265A1 SELECTIVE GATE SPACERS FOR SEMICONDUCTOR DEVICES 公开/授权日：2021-05-13
信息查询
IPC分类:
