- 专利标题： Method of testing a gap fill for DRAM
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申请号： US17522448申请日： 2021-11-09
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公开(公告)号： US11621266B2公开(公告)日： 2023-04-04
- 发明人: Priyadarshi Panda , Seshadri Ganguli , Sang Ho Yu , Sung-Kwan Kang , Gill Yong Lee , Sanjay Natarajan , Rajib Lochan Swain , Jorge Pablo Fernandez
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L27/108
摘要：
Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.
公开/授权文献
- US20220068935A1 GAP FILL METHODS FOR DRAM 公开/授权日：2022-03-03
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