公开(公告)号：US11171141B2

公开(公告)日：2021-11-09

申请号：US16804226

申请日：2020-02-28

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

公开(公告)号：US11621266B2

公开(公告)日：2023-04-04

申请号：US17522448

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L21/67 ,  H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

公开(公告)号：US20220068935A1

公开(公告)日：2022-03-03

申请号：US17522448

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

公开(公告)号：US20200286897A1

公开(公告)日：2020-09-10

申请号：US16804226

申请日：2020-02-28

Applicant: Applied Materials, Inc.

Inventor： Priyadarshi Panda ,  Seshadri Ganguli ,  Sang Ho Yu ,  Sung-Kwan Kang ,  Gill Yong Lee ,  Sanjay Natarajan ,  Rajib Lochan Swain ,  Jorge Pablo Fernandez

IPC: H01L27/108

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.