Invention Grant
- Patent Title: Improving surface topography by forming spacer-like components
-
Application No.: US17694320Application Date: 2022-03-14
-
Publication No.: US11665897B2Publication Date: 2023-05-30
- Inventor: Chun-Chang Wu , Chihy-Yuan Cheng , Sz-Fan Chen , Shun-Shing Yang , Wei-Lin Chang , Ching-Sen Kuo , Feng-Jia Shiu , Chun-Chang Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- The original application number of the division: US16721565 2019.12.19
- Main IPC: H01L27/11546
- IPC: H01L27/11546 ; H01L21/311 ; H01L21/3105 ; H01L21/027 ; H01L27/11521 ; H01L29/66 ; H01L29/423 ; H01L23/544 ; H01L27/11524 ; H01L29/49 ; H01L29/51
Abstract:
A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.
Public/Granted literature
- US20220199636A1 Improving Surface Topography by Forming Spacer-Like Components Public/Granted day:2022-06-23
Information query
IPC分类:
