Invention Grant
- Patent Title: Standby voltage condition for fast RF amplifier bias recovery
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Application No.: US17950708Application Date: 2022-09-22
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Publication No.: US11671058B2Publication Date: 2023-06-06
- Inventor: Poojan Wagh , Kashish Pal
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus & McFarland LLP
- Agent Alessandro Steinfl, Esq.
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F1/56 ; H03F3/193 ; H03F1/22 ; H03F1/30 ; H03F3/189

Abstract:
Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit standby current during operation in the standby mode while allowing a quick recovery to normal operating conditions of the amplifier. Biasing an input transistor of the stacked transistors can be obtained by using a replica stack circuit.
Public/Granted literature
- US20230081055A1 Standby Voltage Condition for Fast RF Amplifier Bias Recovery Public/Granted day:2023-03-16
Information query
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