Invention Grant
- Patent Title: Metal etching with in situ plasma ashing
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Application No.: US16684438Application Date: 2019-11-14
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Publication No.: US11699596B2Publication Date: 2023-07-11
- Inventor: Hsing-Hsiang Wang , Yu-Hsiang Lin , Wei-Da Chen , Tom Peng , P. Y. Chiu , Miau-Shing Tsai , Cheng-Yi Huang , Ching-Horng Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/027 ; H01L21/3105 ; H01J37/32 ; H01L21/67 ; H01L21/677 ; H01L21/683
Abstract:
In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.
Public/Granted literature
- US20200176269A1 METAL ETCHING WITH IN SITU PLASMA ASHING Public/Granted day:2020-06-04
Information query
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