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公开(公告)号：US11699596B2
公开(公告)日：2023-07-11
申请号：US16684438
申请日：2019-11-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsing-Hsiang Wang , Yu-Hsiang Lin , Wei-Da Chen , Tom Peng , P. Y. Chiu , Miau-Shing Tsai , Cheng-Yi Huang , Ching-Horng Chen
IPC: H01L21/321 , H01L21/3213 , H01L21/027 , H01L21/3105 , H01J37/32 , H01L21/67 , H01L21/677 , H01L21/683
CPC classification number: H01L21/32139 , H01J37/3211 , H01J37/32715 , H01L21/0273 , H01L21/31058 , H01L21/32133 , H01L21/67069 , H01L21/67167 , H01L21/67201 , H01L21/67742 , H01L21/6833 , H01J2237/3342
Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.
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公开(公告)号：US11545619B2
公开(公告)日：2023-01-03
申请号：US16934341
申请日：2020-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Hsing-Hsiang Wang , Han-Ting Lin , Yu-Feng Yin , Sin-Yi Yang , Chen-Jung Wang , Yin-Hao Wu , Kun-Yi Li , Meng-Chieh Wen , Lin-Ting Lin , Jiann-Horng Lin , An-Shen Chang , Huan-Just Lin
Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.
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