公开(公告)号：US20220336228A1

公开(公告)日：2022-10-20

申请号：US17855529

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Hsiang WANG ,  Yu-Hsiang Lin ,  Wei-Da Chen ,  Tom Peng ,  P.Y. Chiu ,  Miau-Shing Tsai ,  Cheng-Yi Huang ,  Ching-Horng Chen

IPC: H01L21/3213 ,  H01L21/027 ,  H01L21/3105 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L21/683

Abstract: An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

公开(公告)号：US11699596B2

公开(公告)日：2023-07-11

申请号：US16684438

申请日：2019-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Hsiang Wang ,  Yu-Hsiang Lin ,  Wei-Da Chen ,  Tom Peng ,  P. Y. Chiu ,  Miau-Shing Tsai ,  Cheng-Yi Huang ,  Ching-Horng Chen

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/3105 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/32139 ,  H01J37/3211 ,  H01J37/32715 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/32133 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/6833 ,  H01J2237/3342

Abstract: In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.