Invention Grant
- Patent Title: Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor
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Application No.: US16686406Application Date: 2019-11-18
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Publication No.: US11699721B2Publication Date: 2023-07-11
- Inventor: Sang Sig Kim , Kyoung Ah Cho , Sol A Woo , Doo Hyeok Lim , Jin Sun Cho , Young Soo Park
- Applicant: Korea University Research and Business Foundation
- Applicant Address: KR Seoul
- Assignee: Korea University Research and Business Foundation
- Current Assignee: Korea University Research and Business Foundation
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR 20190103264 2019.08.22
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/739

Abstract:
The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.
Public/Granted literature
- US20210056398A1 INTEGRATE-AND-FIRE NEURON CIRCUIT USING SINGLE-GATED FEEDBACK FIELD-EFFECT TRANSISTOR Public/Granted day:2021-02-25
Information query
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