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公开(公告)号：US10886329B2
公开(公告)日：2021-01-05
申请号：US16177692
申请日：2018-11-01
Inventor： Sang Sig Kim , Kyoung Ah Cho , Kyung Whan Yang
Abstract: The present invention provides a thermoelectric micro-supercapacitor integrated device comprising: a thermoelectric power generation module comprising a thermoelectric unit body including a thermoelectric channel interposed between two different heat sources and disposed on a substrate, the thermoelectric channel being composed of an n-type or p-type semiconductor; and a micro-supercapacitor module configured to be operated in cooperation with the thermoelectric power generation module and including a pair of collector electrodes between which an electric potential difference is generated through the thermoelectric channel.
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公开(公告)号：US11699770B2
公开(公告)日：2023-07-11
申请号：US17558488
申请日：2021-12-21
Inventor： Sang Sig Kim , Kyoung Ah Cho , Seung Gen Yang
IPC: H02S10/30 , H02S40/44 , H10N10/00 , H01L31/0525 , H02J50/00 , H01L25/16 , H10N10/855
CPC classification number: H01L31/0525 , H01L25/16 , H02J50/001 , H02S10/30 , H02S40/44 , H10N10/855 , H02J2300/24 , Y02E10/60
Abstract: The present disclosure relates to an energy harvesting technology for generating electrical energy by using a combination of a solar cell and a thermoelectric device. An energy harvesting system according to one embodiment of the present disclosure may include a solar cell for generating electrical energy based on sunlight; a heat transfer layer formed on at least one edge portion of the upper surface of the solar cell on which sunlight is incident; and a thermoelectric device including a first electrode, a second electrode, a thermoelectric channel disposed between the first and second electrodes, having a horizontal structure in which the first electrode is disposed on the heat transfer layer to be arranged horizontally with respect to the solar cell, and configured to generate additional electrical energy based on the temperature difference between the first and second electrodes.
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公开(公告)号：US11444606B2
公开(公告)日：2022-09-13
申请号：US17168395
申请日：2021-02-05
Inventor： Sang Sig Kim , Kyoung Ah Cho , Doo Hyeok Lim
Abstract: Provided is a spike pulse generation circuit comprising a single silicon device configured to non-periodically or periodically generate a spike pulse. More particularly, the spike pulse generation circuit comprising the single silicon device can utilize a positive feedback loop and a negative feedback loop to be mutually connected so as to selectively output a spike pulse related to a neural oscillation function similar to biological oscillation, thereby being capable of serving as a ring oscillator and performing a neuron function operation.
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公开(公告)号：US11600759B2
公开(公告)日：2023-03-07
申请号：US17365245
申请日：2021-07-01
Inventor： Sang Sig Kim , Kyoung Ah Cho , Yoon Beom Park
Abstract: The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.
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公开(公告)号：US10930334B2
公开(公告)日：2021-02-23
申请号：US16181669
申请日：2018-11-06
Inventor： Sang Sig Kim , Kyoung Ah Cho , Jin Sun Cho , Doo Hyeok Lim , Sol A Woo
IPC: G11C11/39 , H01L29/08 , H01L29/749 , H01L27/105 , H01L29/36 , H01L29/49 , H01L29/45 , H01L23/528
Abstract: The present disclosure discloses a feedback field-effect electronic device using a feedback loop operation and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the array circuit includes a plurality of feedback field-effect electronic devices in which the source region of a diode structure and the drain region of an access electronic device are connected in series, wherein the diode structure is connected to a bit line and a first word line, the access electronic device is connected to a source line and a second word line, and a random access operation is performed by selectively applying voltage to the bit line and the first and second word lines.
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Patent Agency Ranking
公开(公告)号：US09876156B2
公开(公告)日：2018-01-23
申请号：US14845728
申请日：2015-09-04
Inventor： Sang Sig Kim , Kyoung Ah Cho , Jin Yong Choi
Abstract: The present invention provides a thermoelectric generator module including a set of module unit bodies disposed between a hot source and a cold source to serve as fundamental structures for performing thermoelectric power generation and a method of manufacturing the thermoelectric generator module. Each of the module unit bodies comprises: a first electrodes disposed at one of the hot source and the cold source; a second electrode disposed at the other of the hot source and the cold source so as to be spaced apart from the first electrodes; a first nanowire configured to interconnect the first electrode and the second electrode and composed of an n-type or p-type semiconductor; and a second nanowire.
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公开(公告)号：US09806248B2
公开(公告)日：2017-10-31
申请号：US14845780
申请日：2015-09-04
Inventor： Sang Sig Kim , Kyoung Ah Cho , Jin Yong Choi , Dong Hoon Lee
CPC classification number: H01L35/32 , B29C47/0014 , B29C47/0076 , D01D5/0076 , D01D5/0092 , H01L35/34
Abstract: The present invention provides a method of manufacturing a nanofiber-based thermoelectric generator module, the method comprising: an electrode formation step of forming a plurality of electrodes and a plurality of second electrodes so as to be spaced apart from and opposite to each other in an alternately staggered arrangement relative to each other; a first nanofiber arrangement step of arranging a first nonofiber including an n-type or p-type semiconductor; and a second nanofiber arrangement step of arranging a second nonofiber including a semiconductor of a type different from the type of the semiconductor forming the first nanofiber, a nanofiber-based thermoelectric generator module manufactured by the method, and an electrospinning apparatus of manufacturing nanofibers for the nanofiber-based thermoelectric generator module.
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公开(公告)号：US11699721B2
公开(公告)日：2023-07-11
申请号：US16686406
申请日：2019-11-18
Inventor： Sang Sig Kim , Kyoung Ah Cho , Sol A Woo , Doo Hyeok Lim , Jin Sun Cho , Young Soo Park
IPC: H03K17/687 , H01L29/10 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/739
CPC classification number: H01L29/1033 , H01L29/0657 , H01L29/0847 , H01L29/42392 , H01L29/7391 , H03K17/6871
Abstract: The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.
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公开(公告)号：US11695420B2
公开(公告)日：2023-07-04
申请号：US17411353
申请日：2021-08-25
Inventor： Sang Sig Kim , Kyoung Ah Cho , Jae Min Son , Eun Woo Baek
IPC: H01L29/739 , H03K19/017 , H03K19/00 , H01L27/092 , H01L29/06
CPC classification number: H03K19/01714 , H01L27/0922 , H01L29/0665 , H03K19/0013
Abstract: Disclosed is technology that is driven using a positive feedback loop of a feedback field-effect transistor and is capable of performing a logic-in memory function. The logic-in-memory inverter includes a metal oxide semiconductor field-effect transistor, and a feedback field-effect transistor in which a drain region of a nanostructure is connected in series to a drain region of the metal oxide semiconductor field-effect transistor, wherein the logic-in-memory inverter performs a logical operation is performed based on an output voltage VOUT that changes depending on a level of an input voltage VIN that is input to a gate electrode of the feedback field-effect transistor and a gate electrode of the metal oxide semiconductor field-effect transistor while a source voltage VSS is input to a source region of the nanostructure and a drain voltage VDD is input to a source region of the metal oxide semiconductor field-effect transistor.
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公开(公告)号：US11531872B2
公开(公告)日：2022-12-20
申请号：US16896560
申请日：2020-06-09
Inventor： Sang Sig Kim , Kyoung Ah Cho , Young Soo Park , Doo Hyeok Lim , Sol A Woo
IPC: G06N3/063 , H01L29/74 , H03K17/72 , H01L29/749
Abstract: The present disclosure relates to a novel neuron circuit using a p-n-p-n diode to realize small size and low power consumption. The neuron circuit according to one embodiment of the present disclosure may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a critical value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor.
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