Invention Grant
- Patent Title: Conformal high concentration boron doping of semiconductors
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Application No.: US17724994Application Date: 2022-04-20
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Publication No.: US11705335B2Publication Date: 2023-07-18
- Inventor: Srinivas Gandikota , Abhijit Basu Mallick , Swaminathan Srinivasan , Rui Cheng , Susmit Singha Roy , Gaurav Thareja , Mukund Srinivasan , Sanjay Natarajan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- The original application number of the division: US16444856 2019.06.18
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/30 ; H01L21/02 ; H01L21/67
Abstract:
Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.
Public/Granted literature
- US20220246432A1 Conformal High Concentration Boron Doping Of Semiconductors Public/Granted day:2022-08-04
Information query
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