公开(公告)号：US11189635B2

公开(公告)日：2021-11-30

申请号：US16833899

申请日：2020-03-30

申请人： Applied Materials, Inc.

发明人： Chang Seok Kang ,  Tomohiko Kitajima ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC分类号： H01L27/11582 ,  H01L29/792 ,  H01L27/11575 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/677 ,  H01L21/02 ,  H01L21/3213

摘要： Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (Nf:Of); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (Wm:Om), wherein 0.1(Wm:Om)

公开(公告)号：US10460936B2

公开(公告)日：2019-10-29

申请号：US15784834

申请日：2017-10-16

申请人： Applied Materials, Inc.

发明人： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez

IPC分类号： H01L21/02 ,  H01J11/36 ,  C23C16/54 ,  H01L21/324 ,  C23C16/40 ,  C23C16/48 ,  C23C16/56

摘要： A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

公开(公告)号：US10236197B2

公开(公告)日：2019-03-19

申请号：US14589990

申请日：2015-01-05

申请人： Applied Materials, Inc.

发明人： Karthik Janakiraman ,  Abhijit Basu Mallick ,  Hari K. Ponnekanti ,  Mandyam Sriram ,  Alexandros T. Demos ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez ,  Dale R. Dubois

IPC分类号： H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C14/58 ,  C23C14/50 ,  B05C13/00 ,  C23C16/56 ,  H01L21/677

摘要： An apparatus and method for processing a substrate in a processing system containing a deposition chamber, a treatment chamber, and an isolation region, separating the deposition chamber from the treatment is described herein. The deposition chamber deposits a film on a substrate. The treatment chamber receives the substrate from the deposition chamber and alters the film deposited in the deposition chamber with a film property altering device. Processing systems and methods are provided in accordance with the above embodiment and other embodiments.

公开(公告)号：US09972487B2

公开(公告)日：2018-05-15

申请号：US14591609

申请日：2015-01-07

申请人： Applied Materials, Inc.

发明人： Xinhai Han ,  Nagarajan Rajagopalan ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Mukund Srinivasan

IPC分类号： H01L21/02 ,  H01L27/11556 ,  H01L27/11582

CPC分类号： H01L21/02274 ,  H01L21/02164 ,  H01L27/11556 ,  H01L27/11582

摘要： A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.

公开(公告)号：US09613908B2

公开(公告)日：2017-04-04

申请号：US14943913

申请日：2015-11-17

申请人： Applied Materials, Inc.

发明人： Deenesh Padhi ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Alexandros T. Demos ,  Mukund Srinivasan

IPC分类号： H01L21/00 ,  H01L23/532 ,  H01L21/02 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  H01L21/768

CPC分类号： H01L23/5329 ,  C23C16/30 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack.

公开(公告)号：US09412613B2

公开(公告)日：2016-08-09

申请号：US14574928

申请日：2014-12-18

申请人： Applied Materials, Inc.

发明人： Pramit Manna ,  Abhijit Basu Mallick ,  Ludovic Godet ,  Yongmei Chen ,  Jun Xue ,  Mukund Srinivasan ,  Ellie Y. Yieh ,  Srinivas D. Nemani

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L21/3115

CPC分类号： H01L21/3086 ,  H01L21/31144 ,  H01L21/31155

摘要： Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.

摘要翻译： 本文描述的实施例提供了形成蚀刻选择性硬掩模的方法。 非晶碳硬掩模被植入各种掺杂剂以增加硬掩模的硬度和密度。 无定形碳硬掩模的离子注入还保持或减少硬掩模的内部应力。 蚀刻选择性硬掩模通常提供高级NAND和DRAM器件中的改进的图案化。

公开(公告)号：US11430801B2

公开(公告)日：2022-08-30

申请号：US17227925

申请日：2021-04-12

申请人： APPLIED MATERIALS, INC.

发明人： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC分类号： H01L27/1157 ,  H01L27/11582

摘要： Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US11328928B2

公开(公告)日：2022-05-10

申请号：US16444856

申请日：2019-06-18

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Abhijit Basu Mallick ,  Swaminathan Srinivasan ,  Rui Cheng ,  Susmit Singha Roy ,  Gaurav Thareja ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC分类号： H01L21/225 ,  H01L21/30 ,  H01L21/02 ,  H01L21/67

摘要： Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

公开(公告)号：US10998329B2

公开(公告)日：2021-05-04

申请号：US16517956

申请日：2019-07-22

申请人： APPLIED MATERIALS, INC.

发明人： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC分类号： H01L27/1157 ,  H01L27/11582

摘要： Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US20200312874A1

公开(公告)日：2020-10-01

申请号：US16833899

申请日：2020-03-30

申请人： Applied Materials, Inc.

发明人： Chang Seok Kang ,  Tomohiko Kitajima ,  Mukund Srinivasan ,  Sanjay Natarajan

IPC分类号： H01L27/11582 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/677

摘要： Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (Nf:Of); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (Wm:Om), wherein 0.1(Wm:Om)