Invention Grant
- Patent Title: Nanosheet transistors with strained channel regions
-
Application No.: US17136185Application Date: 2020-12-29
-
Publication No.: US11705517B2Publication Date: 2023-07-18
- Inventor: Xin Miao , Kangguo Cheng , Wenyu Xu , Chen Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Samuel Waldbaum
- The original application number of the division: US16269094 2019.02.06
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L21/02 ; H01L21/8234 ; H01L29/10 ; H01L21/762 ; H01L29/08 ; H01L27/092 ; H01L29/06 ; H01L21/265 ; H01L21/311 ; H01L21/3065 ; H01L21/308
Abstract:
A method of fabricating a semiconductor device is described. The method includes forming a nanosheet stack on a substrate, the nanosheet stack includes nanosheet channel layers. A gate is formed around the nanosheet channel layers of the nanosheet stack. A strained material is formed along a sidewall surface of the gate. The strained material is configured to create strain in the nanosheet channel layers of the nanosheet stack.
Public/Granted literature
- US20210151601A1 NANOSHEET TRANSISTORS WITH STRAINED CHANNEL REGIONS Public/Granted day:2021-05-20
Information query
IPC分类:
