- Patent Title: Post-CMP cleaning composition for germanium-containing substrate
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Application No.: US17191534Application Date: 2021-03-03
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Publication No.: US11718812B2Publication Date: 2023-08-08
- Inventor: Ji Cui , William Weilun Hong , Gin-Chen Huang , Shich-Chang Suen , Kei-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: C11D3/43
- IPC: C11D3/43 ; C11D1/40 ; H01L29/66 ; H01L29/78 ; H01L21/304 ; H01L21/306 ; H01L21/321 ; C11D11/00 ; C11D3/37 ; C11D3/30 ; C11D3/00 ; H01L21/02
Abstract:
A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.
Public/Granted literature
- US20210371774A1 POST-CMP CLEANING COMPOSITION FOR GERMANIUM- CONTAINING SUBSTRATE Public/Granted day:2021-12-02
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