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    SELF ALIGNED CONTACT FORMATION
    1.
    发明申请
    SELF ALIGNED CONTACT FORMATION 有权
    自我对齐的联系形式

    公开(公告)号：US20150108651A1

    公开(公告)日：2015-04-23

    申请号：US14583864

    申请日：2014-12-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-Chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L23/528 ,  H01L23/532 ,  H01L29/49 ,  H01L27/088

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

    In-situ metal gate recess process for self-aligned contact application
    4.
    发明授权
    In-situ metal gate recess process for self-aligned contact application 有权
    用于自对准接触应用的原位金属浇口凹槽工艺

    公开(公告)号：US08940597B2

    公开(公告)日：2015-01-27

    申请号：US13792258

    申请日：2013-03-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Jung Hsu ,  Gin-Chen Huang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/8238 ,  H01L29/40

    CPC classification number: H01L29/401 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/67207 ,  H01L21/67219

    Abstract: A method of producing a metal gate structure. The method includes forming a gate structure above a semiconductor substrate and performing one or more chemical metal planarization (CMP) processes to planarize the formed gate structure using a CMP tool. An in situ gate etching process is performed in a CMP cleaner of the CMP tool to form a gate recess. A contact etch stop layer (CESL) can then be deposited in the formed gate recess and one or more CMP processes performed to planarize the CESL.

    Abstract translation: 一种制造金属栅极结构的方法。 该方法包括在半导体衬底之上形成栅极结构，并执行一个或多个化学金属平面化（CMP）工艺，以使用CMP工具对形成的栅极结构进行平坦化。 在CMP工具的CMP清洁器中执行原位栅极蚀刻工艺以形成栅极凹槽。 然后可以将接触蚀刻停止层（CESL）沉积在所形成的栅极凹部中，并执行一个或多个CMP工艺以平坦化CESL。

    Self aligned contact formation
    7.
    发明授权
    Self aligned contact formation 有权
    自对准接触形成

    公开(公告)号：US08921136B2

    公开(公告)日：2014-12-30

    申请号：US13743523

    申请日：2013-01-17

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-Chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/66 ,  H01L21/302 ,  H01L21/461 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/00 ,  H01L23/29 ,  H01L29/76 ,  H01L29/66 ,  H01L27/088 ,  H01L29/788 ,  H01L21/02 ,  H01L29/78

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

    Self Aligned Contact Formation
    8.
    发明申请
    Self Aligned Contact Formation 有权
    自我联系联络

    公开(公告)号：US20140197499A1

    公开(公告)日：2014-07-17

    申请号：US13743523

    申请日：2013-01-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Neng-Kuo Chen ,  Shao-Ming Yu ,  Gin-Chen Huang ,  Chia-Jung Hsu ,  Sey-Ping Sun ,  Clement Hsingjen Wann

    IPC: H01L21/02 ,  H01L29/78

    CPC classification number: H01L23/528 ,  H01L21/02167 ,  H01L21/76897 ,  H01L23/53257 ,  H01L27/088 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

    Abstract translation: 本公开涉及形成自对准接触的方法和相关装置。 在一些实施例中，该方法形成了散布在多个介质线之间的多条栅极线，其中栅极线和介质线在有效区域上沿第一方向延伸。 多条栅极线中的一条或多条是沿着第一方向排列的多个栅极线部分。 多个介质线中的一个或多个被切割成沿第一方向排列的多个介质线段。 虚设隔离材料沿第一方向沉积在相邻介质部分之间并且在第一方向上沉积在相邻的栅线部分之间。 然后通过用接触金属代替有效区域上的多个介质线中的一个或多个的一部分来形成一个或多个自对准的金属接触。

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