公开(公告)号：US20230364733A1

公开(公告)日：2023-11-16

申请号：US18359396

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/306

CPC classification number: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/30625

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20220359277A1

公开(公告)日：2022-11-10

申请号：US17815407

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Cheng Chen ,  Huicheng Chang ,  Fu-Ming Huang ,  Kei-Wei Chen ,  Liang-Yin Chen ,  Tang-Kuei Chang ,  Yee-Chia Yeo ,  Wei-Wei Liang ,  Ji Cui

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L23/532

Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

公开(公告)号：US11450565B2

公开(公告)日：2022-09-20

申请号：US16997616

申请日：2020-08-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Cheng Chen ,  Huicheng Chang ,  Fu-Ming Huang ,  Kei-Wei Chen ,  Liang-Yin Chen ,  Tang-Kuei Chang ,  Yee-Chia Yeo ,  Wei-Wei Liang ,  Ji Cui

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L23/532

Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

公开(公告)号：US11718812B2

公开(公告)日：2023-08-08

申请号：US17191534

申请日：2021-03-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ji Cui ,  William Weilun Hong ,  Gin-Chen Huang ,  Shich-Chang Suen ,  Kei-Wei Chen

IPC: C11D3/43 ,  C11D1/40 ,  H01L29/66 ,  H01L29/78 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C11D11/00 ,  C11D3/37 ,  C11D3/30 ,  C11D3/00 ,  H01L21/02

CPC classification number: C11D1/40 ,  C11D3/0047 ,  C11D3/30 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02041 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3212 ,  H01L29/66795 ,  H01L29/785

Abstract: A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.